Pressureless sintering of nanosilver paste at low temperature to join large area (≥100 mm2) power chips for electronic packaging

被引：102

作者：

Fu, Shancan ^{[1
,2
]}

Mei, Yunhui ^{[1
,2
]}

Lu, Guo-Quan ^{[1
,2
,3
]}

Li, Xin ^{[1
,2
]}

Chen, Gang ^{[4
]}

Chen, Xu ^{[4
]}

机构：

[1] Tianjin Univ, Tianjin Key Lab Adv Joining Technol, Tianjin 300072, Peoples R China

[2] Tianjin Univ, Sch Mat Sci & Engn, Tianjin 300072, Peoples R China

[3] Virginia Tech, Dept Mat Sci & Engn, Blacksburg, VA 24061 USA

[4] Tianjin Univ, Sch Chem Engn & Technol, Tianjin 300072, Peoples R China

来源：

MATERIALS LETTERS | 2014年 / 128卷

基金：

中国国家自然科学基金;

关键词：

Silver nanoparticles; Pressureless sintering; Diffusion bonding; Die attachment; Microstructures;

D O I：

10.1016/j.matlet.2014.04.127

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We achieve robust bonding of large area power chip ( >= 100 mm(2)) based on pressureless sintering of silver particles at low temperature, i.e., 250 degrees C. The particle size of silver ranges from 0.02 to 2 mu m and most organics can be evaporated rapidly from 70 degrees C to 180 degrees C. It is not necessary for metallic bond to be formed entirely by silver nanoparticles. Instead, silver microparticles also can rapidly grow up and aggregated together by atom diffusion from the silver nanoparticles. This point of view leads to a new way to bond the large area chips without additional pressure. The sintered silver joint shows high shear strength, low porosity, high thermal conductivity, and low void ratio. (C) 2014 Elsevier B.V. All rights reserved.

引用

页码：42 / 45

页数：4

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