Effects of n-type doping on active Fe sites in ion implanted Fe in InP

被引：4
|
作者：
Bonapasta, A. Amore
Filippone, F.
Gasparotto, A.
Cesca, T.
机构：
[1] CNR, ISM, I-00016 Monterotondo, Italy
[2] Univ Padua, Dept Phys, I-35131 Padua, Italy
来源：
APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 25期
关键词：
D O I：
10.1063/1.2216106
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
An n-type doping significantly increases the number of active Fe atoms substituting In (Fe-In) in Fe-implanted InP. We address the origin of this doping effect by investigating the relative stability of neutral and charged Fe-In states with first-principles theoretical methods. The present results show that donor-acceptor pairs have direct stabilizing effects on Fe-In related to charge rearrangements strongly localized at the Fe site and involving d orbitals. The resulting microscopic description of the doping effects accounts for the experimental findings and provides a significant guideline for tuning electronic and optical properties of Fe implanted InP and InP-based compounds. (c) 2006 American Institute of Physics.
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页数：3
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