Low band gap S,N-heteroacene-based oligothiophenes as hole-transporting and light absorbing materials for efficient perovskite-based solar cells

被引：124

作者：

Qin, Peng ^{[1
]}

Kast, Hannelore ^{[2
]}

Nazeeruddin, Mohammad K. ^{[1
]}

Zakeeruddin, Shaik M. ^{[1
]}

Mishra, Amaresh ^{[2
]}

Baeuerle, Peter ^{[2
]}

Graetzel, Michael ^{[1
]}

机构：

[1] Ecole Polytech Fed Lausanne, Inst Chem Sci & Engn, Lab Photon & Interfaces, CH-1015 Lausanne, Switzerland

[2] Univ Ulm, Inst Organ Chem & Adv Mat 2, D-89081 Ulm, Germany

来源：

ENERGY & ENVIRONMENTAL SCIENCE | 2014年 / 7卷 / 09期

基金：

新加坡国家研究基金会;

关键词：

LOW-COST;

D O I：

10.1039/c4ee01220h

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Novel low band gap oligothiophenes incorporating S,N-heteropentacene central units were developed and used as hole-transport materials (HTMs) in solid-state perovskite-based solar cells. In addition to appropriate electronic energy levels, these materials show high photo-absorptivity in the low energy region, and thus can contribute to the light harvesting of the solar spectrum. Solution-processed CH3NH3PbI3-based devices using these HTMs achieved power conversion efficiencies of 9.5-10.5% in comparison with 7.6% obtained by reference devices without HTMs. Photoinduced absorption spectroscopy gave further insight into the charge transfer behavior between photoexcited perovskites and the HTMs.

引用

页码：2981 / 2985

页数：5

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