Raman study of Zn1-xMnxGa2Se4 diluted magnetic semiconductors:: disorder and resonance effects

被引:9
作者
Sanjuán, ML [1 ]
Morón, MC [1 ]
机构
[1] Univ Zaragoza, Fac Ciencias, ICMA, E-50009 Zaragoza, Spain
关键词
diluted magnetic semiconductors; Raman scattering; resonance phenomena;
D O I
10.1016/S0921-4526(02)00574-4
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
A RT Raman study of the diluted magnetic semiconductors Zn1-xMnxGaSe4 (0less than or equal to x less than or equal to1) is presented. The end compounds ZnGa2Se4 and MnGa2Se4 crystallize in the 1 (4) over bar 2m and 1 (4) over bar space groups, in which 12 and 13 Raman active modes are expected, respectively. A full mode assignment has been made for MnGa2Se4. Disorder effects are seen for x < 1 compounds due to partially disordered cation distribution. Resonance effects are observed depending on x, in agreement with the evolution of the optical gap. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:565 / 567
页数:3
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