Wave soldering bumping process incorporating electroless nickel UBM

被引：6

作者：

Lin, KL ^{[1
]}

Chen, JW

机构：

[1] Natl Cheng Kung Univ, Dept Mat Sci & Engn, Tainan 701, Taiwan

[2] Ind Technol Res Inst, Optoelect & Syst Labs, Hsinchu, Taiwan

来源：

IEEE TRANSACTIONS ON COMPONENTS AND PACKAGING TECHNOLOGIES | 2000年 / 23卷 / 01期

关键词：

Electroless nickel; flip chip; solder bump; sputtering; under bump metallurgy; wave soldering;

D O I：

10.1109/6144.833053

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The Si/Ti/Cu/electroless nickel/solder bump was produced incorporating wave soldering without flux. The most suitable wave soldering condition for depositing solder is presented. The material interactions occurring during wave soldering, afterwards reflow and extended heat treatment were found to produce Ni3Sn2, Ni3Sn4, and Ni4Sn compounds between solder and electroless nickel deposit. The thickness of electroless nickel deposit required for being the barrier layer of the solder bump was investigated by reflow process.

引用

页码：143 / 150

页数：8

共 9 条

[1]

ADEMA GM, 1994, INT J MICROCIRC ELEC, V17, P352

[2]

HANSEN M, 1988, CONSTITUTION BINARY

[3] SOLDER BUMP FORMATION USING ELECTROLESS PLATING AND ULTRASONIC SOLDERING [J].

INABA, M ;

YAMAKAWA, K ;

IWASE, N .

IEEE TRANSACTIONS ON COMPONENTS HYBRIDS AND MANUFACTURING TECHNOLOGY, 1990, 13 (01) :119-123

[4]

LAU JH, 1997, SOLDER JOINT RELIABI, pCH6

[5] Approaching a uniform bump height of the electroplated solder bumps on a silicon wafer [J].

Lin, KL ;

Chang, SY .

IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY PART B-ADVANCED PACKAGING, 1996, 19 (04) :747-751

[6] Material interactions of solder bumps produced with fluxless wave soldering [J].

Lin, KL ;

Chao, WH .

IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY PART B-ADVANCED PACKAGING, 1998, 21 (01) :59-64

[7]

PUTLLITZ KJ, 1990, IEEE T COMPON HYBR, V13, P647

[8]

WARRIOR M, 1990, P 40 EL COMP TECHN C, V1, P460

[9]

WONG K, 1988, PLATING SURFACE JUL, P70

← 1 →