Electric-field control of magnetism via strain transfer across ferromagnetic/ferroelectric interfaces

被引：113

作者：

Taniyama, Tomoyasu ^{[1
]}

机构：

[1] Tokyo Inst Technol, Mat & Struct Lab, Yokohama, Kanagawa 2268503, Japan

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 2015年 / 27卷 / 50期

关键词：

electric field control of magnetism; multiferroic heterostructures; strain transfer; RESISTIVE SWITCHING MEMORIES; DOMAIN-WALL MOTION; FERROELECTRIC CONTROL; MAGNETIZATION REVERSAL; EXCHANGE BIAS; LOCAL MAGNETIZATION; SPIN INJECTION; NI FILMS; VOLTAGE; FERROMAGNETISM;

D O I：

10.1088/0953-8984/27/50/504001

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

By taking advantage of the coupling between magnetism and ferroelectricity, ferromagnetic (FM)/ferroelectric (FE) multiferroic interfaces play a pivotal role in manipulating magnetism by electric fields. Integrating the multiferroic heterostructures into spintronic devices significantly reduces energy dissipation from Joule heating because only an electric field is required to switch the magnetic element. New concepts of storage and processing of information thus can be envisioned when the electric-field control of magnetism is a viable alternative to the traditional current based means of controlling magnetism. This article reviews some salient aspects of the electric-field effects on magnetism, providing a short overview of the mechanisms of magneto-electric (ME) coupling at the FM/FE interfaces. A particular emphasis is placed on the ME effect via interfacial magneto-elastic coupling arising from strain transfer from the FE to FM layer. Recent results that demonstrate the electric-field control of magnetic anisotropy, magnetic order, magnetic domain wall motion, and etc are described. Obstacles that need to be overcome are also discussed for making this a reality for future device applications.

引用

页数：20

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