Soft error reliability in advanced CMOS technologies-trends and challenges

被引：25
作者：
Tang Du [1 ]
He ChaoHui [1 ]
Li YongHong [1 ]
Zang Hang [1 ]
Xiong Cen [1 ]
Zhang JinXin [1 ]
机构：
[1] Xi An Jiao Tong Univ, Sch Nucl Sci & Technol, Xian 710049, Peoples R China
来源：
SCIENCE CHINA-TECHNOLOGICAL SCIENCES | 2014年 / 57卷 / 09期
基金：
中国国家自然科学基金; 高等学校博士学科点专项科研基金;
关键词：
soft error rate; direct ionization; indirect ionization; multiple errors; single event transient; hardening; challenges; SINGLE-EVENT-UPSET; SILICON-ON-INSULATOR; TRANSIENT PROPAGATION; CHARGE COLLECTION; NUCLEAR-REACTIONS; COMMERCIAL SRAMS; ENERGY; MITIGATION; SOI; RATES;
D O I：
10.1007/s11431-014-5565-6
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
With the decrease of the device size, soft error induced by various particles becomes a serious problem for advanced CMOS technologies. In this paper, we review the evolution of two main aspects of soft error-SEU and SET, including the new mechanisms to induced SEUs, the advances of the MCUs and some newly observed phenomena of the SETs. The mechanisms and the trends with downscaling of these issues are briefly discussed. We also review the hardening strategies for different types of soft errors from different perspective and present the challenges in testing, modeling and hardening assurance of soft error issues we have to address in the future.
引用
收藏
页码：1846 / 1857
页数：12
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