Electroluminescence and electrical properties of nano-crystalline silicon

被引：5
|
作者：
Tamir, S [1 ]
Berger, S
机构：
[1] Technion R&D Fdn Ltd, Israel Inst Met, IL-32000 Haifa, Israel
[2] Technion Israel Inst Technol, Fac Mat Engn, Haifa, Israel
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2000年 / 69卷
关键词：
laser induced CVD; nanocrystalline silicon; silicon emitters;
D O I：
10.1016/S0921-5107(99)00409-2
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Nc-Si formed by laser induced chemical vapor deposition (LCVD) showed photoluminescence behavior similar to porous silicon. We have tried to measure electroluminescence signals by applying contacts to the nc-Si made of materials such as Au, ITO, Al. A three-layer structure Me/nc-Si/Me was used and the contacts were found to be unstable during measurements and failed at relative low bias. The total resistance of the structure was very high and therefore the current flow was very low and only few EL measurements could be done at an integral form. The I-V behavior was studied also on nc-Si produced by pulsed laser deposition (PLD). (C) 2000 Elsevier Science S.A. All rights reserved.
引用
收藏
页码：479 / 483
页数：5
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