Carrier heating in intrinsic graphene by a strong dc electric field

被引：29

作者：

Balev, O. G. ^{[1
]}

Vasko, F. T. ^{[2
]}

Ryzhii, V. ^{[3
,4
]}

机构：

[1] Univ Fed Amazonas, Dept Fis, BR-69077000 Manaus, Amazonas, Brazil

[2] NAS Ukraine, Inst Semicond Phys, UA-03028 Kiev, Ukraine

[3] Univ Aizu, Aizu Wakamatsu, Fukushima 9658580, Japan

[4] CREST, Japan Sci & Technol Agcy, Tokyo 1070075, Japan

来源：

PHYSICAL REVIEW B | 2009年 / 79卷 / 16期

关键词：

carrier density; electric field effects; graphene; phonons; SEMICONDUCTORS; TRANSPORT;

D O I：

10.1103/PhysRevB.79.165432

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We consider the heating of carriers in an intrinsic graphene in a strong dc electric field. The intraband energy relaxation due to acoustic phonon scattering and the interband generation-recombination transitions due to thermal radiation are taken into account. The distributions of nonequilibrium carriers are obtained for the cases when the carrier-carrier scattering is unessential and when the intercarrier Coulomb scattering effectively establishes the quasiequilibrium distribution with the temperature and the density of carriers determined by the balance equations. Due to an interplay between weak energy relaxation and generation-recombination processes, the nonlinear response is characterized by a very low threshold electric field. The nonlinear current-voltage characteristics as well as the field-dependent carrier concentration are calculated for the case of the momentum relaxation associated with the elastic scattering. The obtained current-voltage characteristics exhibit a low threshold of nonlinearity and an appearance of the second ohmic region, for strong fields.

引用

页数：8

共 35 条

[1]

ADAM S, ARXIV08110609

[2] CARRIER TRANSPORT AND NONEQUILIBRIUM PHENOMENA IN DOPED PBTE AND RELATED MATERIALS [J].

AKIMOV, BA ;

DMITRIEV, AV ;

KHOKHLOV, DR ;

RYABOVA, LI .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1993, 137 (01) :9-55

[3] Electron transport and full-band electron-phonon interactions in graphene [J].

Akturk, Akin ;

Goldsman, Neil .

JOURNAL OF APPLIED PHYSICS, 2008, 103 (05)

[4]

Anselm A., 1981, Introduction to semiconductor theory

[5] Generalized kinetic equations for charge carriers in graphene [J].

Auslender, M. ;

Katsnelson, M. I. .

PHYSICAL REVIEW B, 2007, 76 (23)

[6] Carbon-based electronics [J].

Avouris, Phaedon ;

Chen, Zhihong ;

Perebeinos, Vasili .

NATURE NANOTECHNOLOGY, 2007, 2 (10) :605-615

[7] Nanotube electronics and optoelectronics [J].

Avouris, Phaedon ;

Chen, Jia .

MATERIALS TODAY, 2006, 9 (10) :46-54

[8] HOT-ELECTRONS IN ZERO-GAP SEMICONDUCTORS WITH NON-PARABOLIC ELECTRONIC BAND-STRUCTURE [J].

BENESLAVSKII, SD ;

ZIEP, O .

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1978, 88 (01) :221-230

[9] CALCULATION OF IV CURVES IN NARROW-GAP SEMICONDUCTORS WITH SYMMETRIC ELECTRON AND HOLE ENERGY DISPERSION LAWS [J].

BENESLAVSKII, SD ;

DMITRIEV, AV .

SOLID STATE COMMUNICATIONS, 1979, 32 (12) :1175-1179

[10] Hot electron relaxation and phonon dynamics in graphene [J].

Butscher, S. ;

Milde, F. ;

Hirtschulz, M. ;

Malic, E. ;

Knorr, A. .

APPLIED PHYSICS LETTERS, 2007, 91 (20)

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