Switching operation and degradation of resistive random access memory composed of tungsten oxide and copper investigated using in-situ TEM

被引:60
作者
Arita, Masashi [1 ]
Takahashi, Akihito [1 ]
Ohno, Yuuki [1 ]
Nakane, Akitoshi [1 ]
Tsurumaki-Fukuchi, Atsushi [1 ]
Takahashi, Yasuo [1 ]
机构
[1] Hokkaido Univ, Grad Sch Informat Sci & Technol, Kita Ku, Sapporo, Hokkaido 0600814, Japan
基金
日本学术振兴会;
关键词
CONDUCTIVE FILAMENTS; CU;
D O I
10.1038/srep17103
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
In-situ transmission electron microscopy (in-situ TEM) was performed to investigate the switching operation of a resistive random access memory (ReRAM) made of copper, tungsten oxide and titanium nitride (Cu/WOx/TiN). In the first Set (Forming) operation to initialize the device, precipitation appeared inside the WOx layer. It was presumed that a Cu conducting filament was formed, lowering the resistance (on-state). The Reset operation induced a higher resistance (the off-state). No change in the microstructure was identified in the TEM images. Only when an additional Reset current was applied after switching to the off-state could erasure of the filament be seen (over-Reset). Therefore, it was concluded that structural change relating to the resistance switch was localized in a very small area around the filament. With repeated switching operations and increasing operational current, the WOx/electrode interfaces became indistinct. At the same time, the resistance of the off-state gradually decreased. This is thought to be caused by Cu condensation at the interfaces because of leakage current through the area other than through the filament. This will lead to device degradation through mechanisms such as endurance failure. This is the first accelerated aging test of ReRAM achieved using in-situ TEM.
引用
收藏
页数:9
相关论文
共 46 条
[1]   Resistive Random Access Memory (ReRAM) Based on Metal Oxides [J].
Akinaga, Hiroyuki ;
Shima, Hisashi .
PROCEEDINGS OF THE IEEE, 2010, 98 (12) :2237-2251
[2]  
[Anonymous], 2014, 2014 IEEE International Electron Devices Meeting, DOI [10.1109/IEDM.2014.7047050, DOI 10.1109/IEDM.2014.7047050]
[3]   A novel resistance memory with high scalability and nanosecond switching [J].
Aratani, K. ;
Ohba, K. ;
Mizuguchi, T. ;
Yasuda, S. ;
Shiimoto, T. ;
Tsushima, T. ;
Sone, T. ;
Endo, K. ;
Kouchiyama, A. ;
Sasaki, S. ;
Maesaka, A. ;
Yamada, N. ;
Narisawa, H. .
2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2, 2007, :783-786
[4]  
Arita M, 1999, INT J JPN S PREC ENG, V33, P215
[5]   Back-end-of-line compatible Conductive Bridging RAM based on Cu and SiO2 [J].
Bernard, Y. ;
Renard, V. T. ;
Gonon, P. ;
Jousseaume, V. .
MICROELECTRONIC ENGINEERING, 2011, 88 (05) :814-816
[6]  
Chen A., 2011, SOLID STATE ELECTRON, DOI [10.1002/9783527635566.ch1, DOI 10.1002/9783527635566]
[7]   Balancing SET/RESET Pulse for > 1010 Endurance in HfO2/Hf 1T1R Bipolar RRAM [J].
Chen, Yang Yin ;
Govoreanu, Bogdan ;
Goux, Ludovic ;
Degraeve, Robin ;
Fantini, Andrea ;
Kar, Gouri Sankar ;
Wouters, Dirk. J. ;
Groeseneken, Guido ;
Kittl, Jorge A. ;
Jurczak, Malgorzata ;
Altimime, Laith .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2012, 59 (12) :3243-3249
[8]   In Situ Observation of Voltage-Induced Multilevel Resistive Switching in Solid Electrolyte Memory [J].
Choi, Sang-Jun ;
Park, Gyeong-Su ;
Kim, Ki-Hong ;
Cho, Soohaeng ;
Yang, Woo-Young ;
Li, Xiang-Shu ;
Moon, Jung-Hwan ;
Lee, Kyung-Jin ;
Kim, Kinam .
ADVANCED MATERIALS, 2011, 23 (29) :3272-+
[9]   I-V hysteresis of Pr0.7Ca0.3MnO3 during TEM observation [J].
Fujii, T. ;
Kaji, H. ;
Kondo, H. ;
Hamada, K. ;
Arita, M. ;
Takahashi, Y. .
FUNDAMENTALS AND TECHNOLOGY OF MULTIFUNCTIONAL OXIDE THIN FILMS (SYMPOSIUM G, EMRS 2009 SPRING MEETING), 2010, 8
[10]   In-situ transmission electron microscopy of conductive filaments in NiO resistance random access memory and its analysis [J].
Fujii, Takashi ;
Arita, Masashi ;
Hamada, Kouichi ;
Takahashi, Yasuo ;
Sakaguchi, Norihito .
JOURNAL OF APPLIED PHYSICS, 2013, 113 (08)