共 46 条
[2]
[Anonymous], 2014, 2014 IEEE International Electron Devices Meeting, DOI [10.1109/IEDM.2014.7047050, DOI 10.1109/IEDM.2014.7047050]
[3]
A novel resistance memory with high scalability and nanosecond switching
[J].
2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2,
2007,
:783-786
[4]
Arita M, 1999, INT J JPN S PREC ENG, V33, P215
[6]
Chen A., 2011, SOLID STATE ELECTRON, DOI [10.1002/9783527635566.ch1, DOI 10.1002/9783527635566]
[9]
I-V hysteresis of Pr0.7Ca0.3MnO3 during TEM observation
[J].
FUNDAMENTALS AND TECHNOLOGY OF MULTIFUNCTIONAL OXIDE THIN FILMS (SYMPOSIUM G, EMRS 2009 SPRING MEETING),
2010, 8