Ultralow dark current Ge/Si(100) photodiodes with low thermal budget

被引：84

作者：

Osmond, J. ^{[1
]}

Isella, G. ^{[1
]}

Chrastina, D. ^{[1
]}

Kaufmann, R. ^{[2
]}

Acciarri, M. ^{[3
]}

von Kaenel, H. ^{[1
,4
]}

机构：

[1] L NESS, Dipartimento Fis, Politecn Milan, I-22100 Como, Italy

[2] CSEM, CH-8005 Zurich, Switzerland

[3] Univ Milano Bicocca, Dipartimento Sci Mat, I-20125 Milan, Italy

[4] Epispeed, CH-80050 Zurich, Switzerland

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 20期

关键词：

band structure; dark conductivity; elemental semiconductors; germanium; photodiodes; plasma CVD; semiconductor heterojunctions; silicon; THREADING-DISLOCATION DENSITIES; GRADED BUFFER LAYERS; INFRARED DETECTORS; SI PHOTODETECTORS; GE FILMS; SILICON; GERMANIUM; PERFORMANCE; DEPOSITION; PHOTONICS;

D O I：

10.1063/1.3125252

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Vertical incidence photodiodes were fabricated from Ge grown epitaxially on Si(100) by low-energy plasma-enhanced chemical vapor deposition. Consideration of the energy band profiles of n-i-p and p-i-n heterostructures, and optimization of growth processes and thermal budget, allowed the performance of Ge photodectors integrated on Si(100) substrates to be optimized. Record low dark current density of J(s)=4.1x10(-5) A/cm(2) and external quantum efficiency at 1550 nm of eta=32% were measured.

引用

页数：3

共 28 条

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