Target voltage behaviour during DC sputtering of silicon in an argon/nitrogen mixture

被引：44

作者：

Depla, D ^{[1
]}

Colpaert, A ^{[1
]}

Eufinger, K ^{[1
]}

Segers, A ^{[1
]}

Haemers, J ^{[1
]}

De Gryse, R ^{[1
]}

机构：

[1] Univ Ghent, Dept Solid State Sci, B-9000 Ghent, Belgium

来源：

VACUUM | 2002年 / 66卷 / 01期

关键词：

D O I：

10.1016/S0042-207X(01)00415-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

On addition of nitrogen to an argon plasma, the silicon target voltage changes. By following the target voltage during the addition and removal of the reactive gas, the influence of the plasma condition was separated from the influence of the target condition on the target voltage. In this way, we were able to investigate the target surface modification during reactive sputtering. The target surface modification seems to be induced by reactive ion implantation. The target surface (C) Science Ltd. All rights reserved.

引用

页码：9 / 17

页数：9

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