Interplay between strain, quantum confinement, and ferromagnetism in strained ferromagnetic semiconductor (In,Fe)As thin films

被引:13
作者
Sasaki, Daisuke [1 ]
Le Duc Anh [1 ]
Pham Nam Hai [1 ]
Tanaka, Masaaki [1 ]
机构
[1] Univ Tokyo, Dept Elect Engn & Informat Syst, Bunkyo Ku, Tokyo 1138656, Japan
关键词
DILUTED MAGNETIC SEMICONDUCTORS; III-V SEMICONDUCTORS; (IN; MN)AS; WELLS; GAAS;
D O I
10.1063/1.4870970
中图分类号
O59 [应用物理学];
学科分类号
摘要
We systematically investigated the influence of strain on the electronic structure and ferromagnetism of (In,Fe)As thin films. It is found that while the shift of the critical point energies of compressive-strained (In,Fe)As layers grown on (In1-y,Ga-y)As (y = 0.05, 0.1) buffer layers can be explained by the hydrostatic deformation effect (HDE) alone, those of tensile-strained (In,Fe)As layers grown on (Ga1-z,Al-z)Sb (z = 0, 0.5, 1) buffer layers can be explained by the combination of HDE and the quantum confinement effect (QCE). The Curie temperature T-C of the (In, Fe)As layers strongly depends on the strain, and shows a maximum for the (In,Fe)As layer grown on a GaSb buffer layer. The strain dependence of T-C can be explained by the s-d exchange mechanism taking into account HDE and QCE. (C) 2014 AIP Publishing LLC.
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页数:5
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