Microstructure and composition of Au/Si3N4 model interface

被引：0

作者：

Suzuki, H

Yonemitsu, K

Saito, T

Ikuhara, Y

机构：

[1] Japan Fine Ceram Ctr, Microstruct Characterizat Div, Atsuta Ku, Nagoya, Aichi 4568587, Japan

[2] Univ Tokyo, Fac Engn, Inst Engn Res, Bunkyo Ku, Tokyo 1138656, Japan

来源：

JOURNAL OF THE CERAMIC SOCIETY OF JAPAN | 1999年 / 107卷 / 12期

关键词：

silicon nitride; gold; interface structure; high resolution electron microscopy;

D O I：

10.2109/jcersj.107.1193

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

An Au/Si3N4 interface was obtained by vapor deposition of Au on a Si3N4 substrate in vacuum, both at room temperature and 600 degrees C. The interface structure and chemical composition were investigated by high resolution and analytical electron microscopy. A damaged phase was observed between Au and Si3N4 crystals. The thickness of this phase increased when the substrate surface was polished or the substrate was heated. This phase was found to be amorphous and merely composed of Si and N.

引用

页码：1193 / 1195

页数：3