Development of millimeter-wave transceiver MCM for reliability and productivity, using aluminum-nitride co-fired substrate

被引:0
作者
Kaneko, T [1 ]
Akaishi, M
Watanabe, H
Wada, K
机构
[1] NEC Amer Inc, Radio Commun Syst Div, Hillsboro, OR USA
[2] NEC Corp Ltd, C&C LSI Dev Div, Tokyo, Japan
[3] NEC Corp Ltd, Fundamental Technol Dev Dept, Microwave & Satellite Commun Div, Tokyo, Japan
[4] NEC Fukushima Ltd, Dev Dept 1, Fukushima, Japan
来源
NEC RESEARCH & DEVELOPMENT | 2000年 / 41卷 / 01期
关键词
millimeter-wave; ALN (Aluminum-Nitride); HTCC (High Temperature Co-Fired Ceramics); MCM (Multi Chip Module); reliability; transceiver; P-HJ-FET (pseudomorphic hetero junction FET);
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
NEC has developed the millimeter-wave transceiver MCM (Multi Chip Module) based on the AIN (Aluminum-Nitride) multi-layer HTCC (High Temperature Go-Fired Ceramics) technology, The module is achieving both reliability and mass productivity with excellent millimeter-wave performances. In the size of 3.5cm x 3.5cm miniaturized multi layer co-fired ceramic substrate, the whole circuit functions (the oscillators, the frequency converters and the front-end amplifiers) of the 28/31GHz transceiver are realized. The estimated filed-life is more than ten years obtained by accelerated reliability test. AIN's thermal conductivity of 170W/mK make it possible for power consumption of 10W to be realized in 12cm(2) area single substrate package, keeping the channel temperature of millimeter-wave FET low enough for the reliability. There are several packaging technologies proposed to extend the field life, the de-stressing between the different CTE (Coefficient of Temperature Expansion) materials and hermetic sealing of the microscopic active devices.
引用
收藏
页码:54 / 58
页数:5
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