Optical and electrical properties of MoS2 and Fe-doped MoS2

被引：68

作者：

Wang, Song Yu ^{[1
]}

Ko, Tsung Shine ^{[1
]}

Huang, Cheng Ching ^{[1
]}

Lin, Der Yuh ^{[1
]}

Huang, Ying Sheng ^{[2
]}

机构：

[1] Natl Changhua Univ Educ, Dept Elect Engn, Changhua 500, Taiwan

[2] Natl Taiwan Univ Sci & Technol, Dept Elect Engn, Taipei 106, Taiwan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2014年 / 53卷 / 04期

关键词：

TEMPERATURE-DEPENDENCE; MOBILITY; POWER;

D O I：

10.7567/JJAP.53.04EH07

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We prepared undoped and Fe-doped MoS2 layered crystals using a chemical vapor transport method to compare their optical and electrical properties. Optical behaviors of carrier transitions were observed successfully in both undoped and Fe-doped MoS2 samples using reflectance and piezoreflectance. Frequency-dependent photoconductivity (PC) measurements reveal an additional deep Fe doping level for the Fe-doped MoS2 sample. In addition, a longer carrier lifetime was calculated for the Fe-doped MoS2 sample than for the undoped MoS2 sample through PC analysis. Hall measurements were also performed for both samples and indicated that the Fe-doped MoS2 sample exhibited a higher carrier concentration and a lower mobility owing to the effect of Fe dopants. Furthermore, both samples were confirmed to have n-type carriers. (C) 2014 The Japan Society of Applied Physics

引用

页数：5

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