Development of ballistic electron cold cathode by a low-temperature processing of polycrystalline silicon films

被引:17
作者
Ichihara, T
Honda, Y
Aizawa, K
Komoda, T
Koshida, N
机构
[1] Matsushita Elect Works Ltd, Adv Technol Res Lab, Osaka 5718686, Japan
[2] Tokyo Univ Agr & Technol, Fac Technol, Dept Elect & Elect Engn, Tokyo 1848588, Japan
关键词
crystallites; nanostructures; semiconducting silicon; cold cathode;
D O I
10.1016/S0022-0248(01)02245-X
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
A novel cold cathode is fabricated on a glass substrate by anodization and the subsequent electrochemical oxidation (ECO) treatment at practical low temperatures. Existence of Si nanocrystallites with a diameter of 5-10 nm are observed in anodized porous poly Si (PPS) films as in the case of PPS formed on a Si substrate at higher temperatures. A matrix-type cold cathode is fabricated on glass substrates. The obtained ballistic electron emission property is almost the same as that of PPS cold cathode fabricated on Si substrates we reported previously. It is also shown that postanodization ECO is very useful for this subject. (C) 2002 Published by Elsevier Science B.V.
引用
收藏
页码:1915 / 1919
页数:5
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