Colossal Permittivity Characteristics of (Nb, Si) Co-Doped TiO2 Ceramics

被引：6

作者：

Kotb, Hicham Mahfoz ^{[1
,2
]}

Alshoaibi, Adil ^{[1
]}

Mazher, Javed ^{[1
]}

Shaalan, Nagih M. ^{[1
,2
]}

Ahmad, Mohamad M. ^{[1
,3
]}

机构：

[1] King Faisal Univ, Coll Sci, Dept Phys, POB 400, Al Hasa 31982, Saudi Arabia

[2] Assiut Univ, Fac Sci, Phys Dept, Assiut 71516, Egypt

[3] New Valley Univ, Fac Sci, Dept Phys, El Kharga 72511, Egypt

来源：

MATERIALS | 2022年 / 15卷 / 13期

关键词：

ceramics; sintering; relative permittivity; relaxation; DIELECTRIC-PROPERTIES; PLUS; CACU3TI4O12; MICROSTRUCTURE; BEHAVIOR; NIOBIUM;

D O I：

10.3390/ma15134701

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

(Nb5+, Si4+) co-doped TiO2 (NSTO) ceramics with the compositions (Nb0.5Si0.5)(x)Ti1-xO2, x = 0, 0.025, 0.050 and 0.1 were prepared with a solid-state reaction technique. X-ray diffraction (XRD) patterns and Raman spectra confirmed that the tetragonal rutile is the main phase in all the ceramics. Additionally, XRD revealed the presence of a secondary phase of SiO2 in the co-doped ceramics. Impedance spectroscopy analysis showed two contributions, which correspond to the responses of grain and grain-boundary. All the (Nb, Si) co-doped TiO2 showed improved dielectric performance in the high frequency range (>10(3) Hz). The sample (Nb0.5Si0.5)(0.025)Ti0.975O2 showed the best dielectric performance in terms of higher relative permittivity (5.5 x 10(4)) and lower dielectric loss (0.18), at 10 kHz and 300 K, compared to pure TiO2 (1.1 x 10(3), 0.34). The colossal permittivity of NSTO ceramics is attributed to an internal barrier layer capacitance (IBLC) effect, formed by insulating grain-boundaries and semiconductor grains in the ceramics.

引用

页数：11

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