Impact of oxide defects on band offset at GeO2/Ge interface

被引：67

作者：

Yang, M. ^{[1
]}

Wu, R. Q. ^{[1
]}

Chen, Q. ^{[1
]}

Deng, W. S. ^{[1
]}

Feng, Y. P. ^{[1
]}

Chai, J. W. ^{[2
]}

Pan, J. S. ^{[2
]}

Wang, S. J. ^{[2
]}

机构：

[1] Natl Univ Singapore, Dept Phys, Singapore 117542, Singapore

[2] Inst Mat Res & Engn, Singapore 117602, Singapore

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 14期

关键词：

conduction bands; dielectric materials; electronic density of states; elemental semiconductors; germanium; germanium compounds; interface states; oxidation; semiconductor-insulator boundaries; vacancies (crystal); valence bands; X-ray photoelectron spectra; INITIO MOLECULAR-DYNAMICS; OXIDATION; SIO2; GE;

D O I：

10.1063/1.3115824

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High quality GeO2 dielectrics were prepared on Ge(001) surface by direct atomic source oxidation. The band alignments have been studied by using high resolution x-ray photoemission spectroscopy. The valence and conduction band offsets at GeO2/Ge(001) interface are 4.59 +/- 0.03 and 0.54 +/- 0.03 eV, respectively. The calculated projected density of states indicate that the formation of germanium and oxygen vacancies at different oxidation stages might result in the reduction of valence band offsets, which clarified the varied experimental results of valence band offset [M. Perego , Appl. Phys. Lett. 90, 162115 (2007) and V. V. Afanas'ev and A. Stesmans, Appl. Phys. Lett. 84, 2319 (2004)].

引用

页数：3

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