Thickness-dependent dielectric constants of (Ba,Sr)TiO3 thin films with Pt or conducting oxide electrodes

被引:138
作者
Hwang, CS [1 ]
机构
[1] Seoul Natl Univ, Sch Mat Sci & Engn, Seoul 151742, South Korea
[2] Seoul Natl Univ, Interuniv Semicond Res Ctr, Seoul 151742, South Korea
关键词
D O I
10.1063/1.1483105
中图分类号
O59 [应用物理学];
学科分类号
摘要
The decrease in the measured dielectric constant of sputter-deposited (Ba,Sr)TiO3 thin films having Pt electrodes with decreasing dielectric film thickness was analyzed by a combination of theories regarding the finite charge-screening length of the metal electrode and the intrinsic-dead layer of the dielectric surface. It was found that the decreasing dielectric constant was mainly due to the metal electrode capacitance rather than the intrinsic-dead-layer capacitance. The almost film-thickness-independent dielectric constant of the (Ba,Sr)TiO3 thin films with conducting oxide electrodes, IrO2 and SrRuO3, when the dielectric film thickness >20 nm, was attributed to the very high capacitance values of the charge-screening layer of the oxide electrodes. The very high capacitance value appeared to originate from the strain-induced high dielectric constant of the oxide electrodes. (C) 2002 American Institute of Physics.
引用
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页码:432 / 437
页数:6
相关论文
共 24 条
[11]  
JAFFE B, 1971, PIEZOELECTRIC CERAMI, P72
[12]  
KITTEL C, 1976, INTRO SOLID STATE PH, P154
[13]  
KU, 1964, J APPL PHYS, V35, P265
[14]   Influences of interfacial intrinsic low-dielectric layers on the dielectric properties of sputtered (Ba,Sr)TiO3 thin films [J].
Lee, BT ;
Hwang, CS .
APPLIED PHYSICS LETTERS, 2000, 77 (01) :124-126
[15]   DEPOLARIZATION FIELDS IN THIN FERROELECTRIC FILMS [J].
MEHTA, RR ;
SILVERMAN, BD ;
JACOBS, JT .
JOURNAL OF APPLIED PHYSICS, 1973, 44 (08) :3379-3385
[16]   Thickness dependence of the effective dielectric constant in a thin film capacitor [J].
Natori, K ;
Otani, D ;
Sano, N .
APPLIED PHYSICS LETTERS, 1998, 73 (05) :632-634
[17]   Effect of mechanical boundary conditions on phase diagrams of epitaxial ferroelectric thin films [J].
Pertsev, NA ;
Zembilgotov, AG ;
Tagantsev, AK .
PHYSICAL REVIEW LETTERS, 1998, 80 (09) :1988-1991
[18]   The effect of strain on the permittivity of SrTiO3 from first-principles study [J].
Schimizu, T .
SOLID STATE COMMUNICATIONS, 1997, 102 (07) :523-527
[19]  
Scott JF, 2001, J PHYS IV, V11, P9, DOI 10.1051/jp4:20011102
[20]   Dielectric and electrical properties of sputter grown (Ba,Sr)TiO3 thin films [J].
Shin, JC ;
Park, J ;
Hwang, CS ;
Kim, HJ .
JOURNAL OF APPLIED PHYSICS, 1999, 86 (01) :506-513