Fabrication of p-Type ZnO Thin Films Using rf-Magnetron Sputter Deposition

被引：8
作者：
Kim, Jun Kwan [1 ,2 ]
Lim, Jung Wook [2 ]
Kim, Hyun Tak [2 ]
Kim, Sang Hoon [2 ]
Yun, Sun Jin [1 ,2 ]
机构：
[1] Univ Sci & Technol, Dept Next Generat Device Engn, Taejon 305333, South Korea
[2] Elect & Telecommun Res Inst, Informat Technol Convergence & Components Lab, MIT Device Team, Taejon 305700, South Korea
来源：
ELECTROCHEMICAL AND SOLID STATE LETTERS | 2009年 / 12卷 / 04期
关键词：
annealing; carrier density; elemental semiconductors; II-VI semiconductors; phosphorus; semiconductor doping; semiconductor thin films; silicon; sputter deposition; wide band gap semiconductors; zinc compounds; ZINC-OXIDE FILMS; SILICON;
D O I：
10.1149/1.3067756
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
p-Type ZnO thin films were prepared on phosphorus (P)-doped poly-Si by sputter deposition under various ambient ratios of Ar and O-2 and subsequent annealing process at temperatures ranging from 400 to 600 degrees C. The effects of the ambient sputtering gas and annealing temperature on the electrical and material characteristics of ZnO films were investigated. The formation of p-ZnO film on P-doped poly-Si was confirmed through comparisons involving the conduction type of the ZnO film deposited on insulating SiO2. The film deposited in Ar ambient and annealed at 500 degrees C showed a maximum hole concentration of 5.92x10(19) cm(-3).
引用
收藏
页码：H109 / H112
页数：4
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