ADVANCED HOT-CARRIER INJECTION PROGRAMMING SCHEME FOR SUB 20NM NAND FLASH CELL AND BEYOND

被引：0

作者：

Ahn, Sang-Tae ^{[1
]}

Mun, Kyungsik ^{[1
]}

Lee, Keun Woo ^{[1
]}

Cho, Gyuseog ^{[1
]}

Park, Sung-Kye ^{[1
]}

Lee, Seokkiu ^{[1
]}

Hong, Sungjoo ^{[1
]}

机构：

[1] Hynix Semicond Inc, R&D Div, Flash Device Technol Team, Inchon 476701, Kyoungki Do, South Korea

来源：

2012 4TH IEEE INTERNATIONAL MEMORY WORKSHOP (IMW) | 2012年

关键词：

NAND flash; Self-channel boosting; Program disturb; Pass disturb; Hot Carrier Injection(HCI);

D O I：

暂无

中图分类号：

TP301 [理论、方法];

学科分类号：

081202 ;

摘要：

A novel hot-carrier programming method for 20-nm-node technology NAND Flash cell is presented. In order to suppress the program disturb and the large power consumption, we utilized the self-channel boosting techniques with floated WLn-1, switching SSL, and a sufficiently high local field to cause efficient hot-carrier injection in NAND string. This method has been successfully demonstrated in the 20-nm-node NAND Flash cells, along with comprehensive studies on various bias conditions and algorithm. It would be very attractive for further scaling in NAND Flash memories beyond 20-nm technology.

引用

页数：4

共 4 条

[1]

Lee KB, 2011, PRINCIPLES OF MICROELECTROMECHANICAL SYSTEMS, P64

[2] Flash memory cells - An overview [J].

Pavan, P ;

Bez, R ;

Olivo, P ;

Zanoni, E .

PROCEEDINGS OF THE IEEE, 1997, 85 (08) :1248-1271

[3] A Novel Low-Voltage Low-Power Programming Method for NAND Flash Cell by Utilizing Self-Boosting Channel Potential for Carrier Heating [J].

Tsai, Wen-Jer ;

Huang, J. S. ;

Tsai, Ping-Hung ;

Yan, S. G. ;

Cheng, Cheng-Hsien ;

Cheng, C. C. ;

Chen, Yin-Jen ;

Lee, Chih-Hsiung ;

Han, Tzung-Ting ;

Lu, Tao-Cheng ;

Chen, Kuang-Chao ;

Lu, Chih-Yuan .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2011, 58 (06) :1620-1627

[4]

Tsai Wen-Jer, 2011, S VLSI TECHN JUN, P72

← 1 →