Recent advances in quantum dot based lasers and amplifiers at 1.55μm

被引：0
|
作者：
Dagens, B. [1 ]
Lelarge, F. [1 ]
Accard, A. [1 ]
Pornmereau, F. [1 ]
Brenot, R. [1 ]
Renaudier, J. [1 ]
van Dijk, F. [1 ]
Duan, G. -H. [1 ]
机构：
[1] Alcatel Thales 3, Lab 5, Route Dept 128, F-91767 Palaiseau, France
来源：
WORKSHOP ON OPTICAL COMPONENTS FOR BROADBAND COMMUNICATION | 2006年 / 6350卷
关键词：
telecom; quantum dots; semiconductor lasers; semiconductor optical amplifiers; mode-locked laser; clock recovery;
D O I：
10.1117/12.692911
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Quantum dot (QD) materials offer attractive performances for the development of lasers and amplifiers at 1.55 mu m. The 3-D quantification of the energy levels in QD leads to several advantages, such as high optical gain and efficiency, low sensitivity to temperature variations, low noise and low linewidth enhancement factor. We shall present in this paper the growth and basic properties of QD materials for lasers and amplifiers, and device performances with particular interest for optical communications and microwave transmission.
引用
收藏
页数：8
相关论文
共 50 条
  • [1] Recent advances on InAs/InP quantum dash based, semiconductor lasers and optical amplifiers operating at 1.55 μm
    Lelarge, Francois
    Dagens, Beatrice
    Renaudier, Jeremie
    Brenot, R.
    Accard, Alain
    van Dijk, Frederic
    Make, Dalila
    Le Gouezigou, Odile
    Provost, Jean-Guy
    Poingt, Francis
    Landreau, Jean
    Drisse, Olivier
    Derouin, Estelle
    Rousseau, Benjamin
    Pommereau, Frederic
    Duan, Guang-Hua
    IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2007, 13 (01) : 111 - 124
  • [2] Recent Advances in Long Wavelength Quantum Dot Lasers and Amplifiers
    Notzel, R.
    Bente, E. A. J. M.
    Smit, M. K.
    Dorren, H. J. S.
    OFC: 2009 CONFERENCE ON OPTICAL FIBER COMMUNICATION, VOLS 1-5, 2009, : 2568 - 2570
  • [3] Quantum Dot Lasers and Amplifiers on Silicon Recent Advances and Future Developments
    Wan, Yating
    Norman, Justin
    Liu, Songtao
    Liu, Alan
    Bowers, John E.
    IEEE NANOTECHNOLOGY MAGAZINE, 2021, 15 (02) : 8 - 22
  • [4] Recent advances in Quantum Dot material for microwave semiconductor lasers and amplifiers
    Dagens, B.
    Lelarge, F.
    Rousseau, B.
    Accard, A.
    Poingt, F.
    Provost, J. G.
    Make, D.
    Le Gouezigou, O.
    Landreau, J.
    Pommereau, F.
    Brenot, R.
    Renaudier, J.
    van Dijk, F.
    Duan, G. -H.
    2006 INTERNATIONAL TOPICAL MEETING ON MICROWAVES PHOTONICS, 2006, : 187 - +
  • [5] 1.55 μm InAs quantum dot DFB lasers
    Kim, Jin Soo
    Kwack, Ho-Sang
    Choi, Yung Seok
    Sim, Eundeuk
    Lee, Chul Wook
    Oh, Dae Kon
    Lee, Cheul-Ro
    IEEE NMDC 2006: IEEE NANOTECHNOLOGY MATERIALS AND DEVICES CONFERENCE 2006, PROCEEDINGS, 2006, : 332 - +
  • [6] 1.5 μm Quantum Dot Lasers and Amplifiers
    Reithmaier, Johann Peter
    Eisenstein, Gadi
    2018 IEEE INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE (ISLC), 2018, : 59 - 60
  • [7] Recent advances in long wavelength quantum dot based lasers
    Ramdane, A.
    Martinez, A.
    Azouigui, S.
    Cong, D. -Y.
    Merghem, K.
    Akrout, A.
    Gosset, C.
    Moreau, G.
    Lelarge, F.
    Dagens, B.
    Provost, J. -G.
    Accard, A.
    Le Gouezigou, O.
    Krestnikov, I.
    Kovsh, A.
    Fischer, M.
    QUANTUM SENSING AND NANOPHOTONIC DEVICES V, 2008, 6900
  • [8] Towards 1.55 μm GaAs Based Lasers Using Quantum Dot Bilayers
    Majid, M. A.
    Childs, D. T. D.
    Kennedy, K.
    Airey, R.
    Hogg, R. A.
    Clarke, E.
    Spencer, P.
    Murray, R.
    22ND IEEE INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE, 2010, : 69 - +
  • [9] 1.55 μm InAs/InAlGaAs quantum dot DFB lasers
    Kim, Jin Soo
    Lee, Cheul-Ro
    Kwack, Ho-Sang
    Choi, Byung Seok
    Sim, Eundeuk
    Lee, Chul Wook
    Oh, Dae Kon
    IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2008, 7 (02) : 128 - 130
  • [10] Quantum dot lasers and amplifiers
    Pohl, UW
    Bimberg, D
    SELF-ORGANIZED PROCESSES IN SEMICONDUCTOR HETEROEPITAXY, 2004, 794 : 179 - 187
12345