Influence of adsorption small molecules atrazine on nonvolatile resistive switching behavior in Co-Al layered double hydroxide films

被引：2

作者：

Sun, Yanmei ^{[1
,2
,3
]}

Li, Li ^{[1
,2
]}

Shi, Keying ^{[1
]}

机构：

[1] Heilongjiang Univ, Sch Chem & Mat Sci, Minist Educ, Key Lab Funct Inorgan Mat Chem, Harbin 150080, Peoples R China

[2] Heilongjiang Univ, Sch Chem & Mat Sci, Key Lab Chem Engn Proc & Technol High Efficiency, Harbin 150080, Peoples R China

[3] Heilongjiang Univ, Sch Elect Engn, Harbin 150080, Peoples R China

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2021年 / 32卷 / 07期

基金：

中国国家自然科学基金;

关键词：

Coated glass substrates - Impregnation methods - Layered double hydroxides - Resistive switching - Resistive switching behaviors - Rewritable memory - Voltage characteristics - Write-once read-many-times;

D O I：

10.1007/s10854-021-05365-z

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Co-Al-layered double hydroxides (LDHs) thin films were prepared by drop-casting process on ITO-coated glass substrates. And then the small molecule atrazine was adsorbed on the Co-Al LDHs film by impregnation method. Current-voltage characteristics revealed nonvolatile resistive switching in Co-Al LDHs adsorbed atrazine films. The Influence of adsorption small molecules atrazine on nonvolatile resistive switching behavior in Co-Al LDHs film has been investigated. By varying the atrazine adsorbed content in Co-Al LDHs thin films, the nonvolatile resistive switching behavior of device could be adjusted in a controlled way. Entirely different nonvolatile resistive switching characteristic, such as write-once read-many-times memory effect and rewritable memory effect are discriminable by the current-voltage curves.

引用

页码：8304 / 8316

页数：13

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