High-Performance Coplanar Dual-Channel a-InGaZnO/a-InZnO Semiconductor Thin-Film Transistors with High Field-Effect Mobility

被引:53
作者
Billah, Mohammad Masum [1 ]
Siddik, Abu Bakar [1 ]
Kim, Jung Bae [2 ]
Yim, Dong Kil [2 ]
Choi, Soo Young [2 ]
Liu, Jian [3 ]
Severin, Daniel [3 ]
Hanika, Markus [3 ]
Bender, Marcus [3 ]
Jang, Jin [1 ]
机构
[1] Kyung Hee Univ, Dept Informat Display, Adv Display Res Ctr ADRC, 26 Kyungheedae Ro, Seoul 02447, South Korea
[2] Appl Mat Inc, AKT Display, Santa Clara, CA 95054 USA
[3] Appl Mat GmbH & Co KG, Siemensstr 100, D-63755 Alzenau, Germany
基金
新加坡国家研究基金会;
关键词
a-IGZO; a-IZO; dual-channel architecture; TCAD simulations; thin-film transistors; OXIDE SEMICONDUCTOR; LOW-TEMPERATURE; TRANSPORT;
D O I
10.1002/aelm.202000896
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
An amorphous indium gallium zinc oxide (a-IGZO) layer is deposited on very thin conductive amorphous indium zinc oxide (a-IZO) thin film to demonstrate high-performance, coplanar thin-film transistors (TFTs) with dual-channel oxide semiconductor architecture. Based on material properties, a conduction band offset ( increment E-C) of approximate to 0.28 eV between a-IZO and a-IGZO layers and a conduction band bending of approximate to 0.3 eV at a-IGZO/gate insulator (GI) interface exist. Through the electrical characterization, high field-effect mobility (mu(FE)) of approximate to 50 cm(2) V-1 s(-1), a positive threshold voltage (V-Th) of approximate to 2.3 V, and low off-current (I-OFF) of <1 pA in coplanar a-IZO/a-IGZO TFT are demonstrated. The electron accumulation (>5 x 10(18) cm(-3)) at both the a-IZO/a-IGZO and a-IGZO/GI interfaces confirm the dual-channel conduction. The bottom a-IZO channel significantly contributes to increasing drain current (I-D) due to large electron density (approximate to 10(19) cm(-3)). The dual-channel coplanar TFT with a-IGZO/IZO provides a guideline for overcoming the trade-off between high mu(FE) and positive V-Th control for stable enhancement mode operation with increased I-D.
引用
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页数:11
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