Improved characteristics of InGaN multiple-quantum-well light-emitting diode by GaN/AlGaN distributed Bragg reflector grown on sapphire

被引：113
作者：
Nakada, N
Nakaji, M
Ishikawa, H
Egawa, T
Umeno, M
Jimbo, T
机构：
[1] Nagoya Inst Technol, Dept Elect & Comp Engn, Showa Ku, Nagoya, Aichi 4668555, Japan
[2] Nagoya Inst Technol, Res Ctr Microstruct Devices, Showa Ku, Nagoya, Aichi 4668555, Japan
[3] Nagoya Inst Technol, Dept Environm Technol & Urban Planning, Showa Ku, Nagoya, Aichi 4668555, Japan
来源：
APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 14期
关键词：
D O I：
10.1063/1.126171
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
An InGaN multiple-quantum-well light-emitting diode (LED) containing a GaN/AlGaN distributed Bragg reflector has been grown on a sapphire substrate by metalorganic chemical vapor deposition. Comparing with the conventional LED, the output power has been improved from 79 to 120 mu W under 20 mA direct current biasing condition and the external quantum efficiency has been also improved from 0.16% to 0.23% under 10 mA dc current. (C) 2000 American Institute of Physics. [S0003-6951(00)03314-3].
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页码：1804 / 1806
页数：3
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