Wurtzite phonons and the mobility of a GaN/AlN 2D hole gas

被引：20

作者：

Bader, Samuel James ^{[1
]}

Chaudhuri, Reet ^{[2
]}

Schubert, Martin F. ^{[3
]}

Then, Han Wui ^{[4
]}

Xing, Huili Grace ^{[2
,5
,6
]}

Jena, Debdeep ^{[2
,5
,6
]}

机构：

[1] Cornell Univ, Sch Appl & Engn Phys, Ithaca, NY 14853 USA

[2] Cornell Univ, Sch Elect & Comp Engn, Ithaca, NY 14853 USA

[3] X Dev LLC, 100 Mayfield Ave, Mountain View, CA 94043 USA

[4] Intel Corp, 2501 NE Century Blvd, Hillsboro, OR 97124 USA

[5] Cornell Univ, Dept Mat Sci & Engn, Ithaca, NY 14853 USA

[6] Kavli Inst Cornell, Ithaca, NY 14853 USA

来源：

APPLIED PHYSICS LETTERS | 2019年 / 114卷 / 25期

关键词：

POLAR OPTICAL PHONONS; GROUP VELOCITIES; ALN/GAN/ALN; EQUATIONS; SPECTRUM;

D O I：

10.1063/1.5099957

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

To make complementary GaN electronics a desirable technology, it is essential to understand the low mobility of 2D hole gases in III-Nitride heterostructures. This work derives both the acoustic and optical phonon spectra present in one of the most prominent p-channel heterostructures (the all-binary GaN/AlN stack) and computes the interactions of these spectra with the 2D hole gas, capturing the temperature dependence of its intrinsic mobility. Finally, the effects of strain on the electronic structure of the confined 2D hole gas are examined and a means is proposed to engineer the strain to improve the 2D hole mobility for enhanced p-channel device performance, with the goal of enabling wide-bandgap CMOS.

引用

页数：5

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