Physically Based Evaluation of Electron Mobility in Ultrathin-Body Double-Gate Junctionless Transistors

被引：18

作者：

Wei, Kangliang ^{[1
]}

Zeng, Lang ^{[1
]}

Wang, Juncheng ^{[1
]}

Du, Gang ^{[1
]}

Liu, Xiaoyan ^{[1
]}

机构：

[1] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2014年 / 35卷 / 08期

关键词：

Ionized impurity scattering; junctionless (JL); mobility; screening; surface roughness; ultrathin; CHARGE-TRANSPORT; MOSFETS;

D O I：

10.1109/LED.2014.2331326

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, we presented theoretical results on the low-field electron mobility of ultrathin-body double-gate junctionless transistors. A 1D Poisson-Schrodinger problem perpendicular to the gate is self-consistently solved to get the electron wavefunctions, and the Kubo-Greenwood formula with consideration of phonon, surface roughness, and ionized impurity scattering is employed to evaluate the corresponding mobility components. The dependence of mobility on silicon layer thickness and doping concentration is also investigated.

引用

页码：817 / 819

页数：3

共 17 条

[11] THE MONTE-CARLO METHOD FOR THE SOLUTION OF CHARGE TRANSPORT IN SEMICONDUCTORS WITH APPLICATIONS TO COVALENT MATERIALS [J].

JACOBONI, C ;

REGGIANI, L .

REVIEWS OF MODERN PHYSICS, 1983, 55 (03) :645-705

[12] Junctionless multigate field-effect transistor [J].

Lee, Chi-Woo ;

Afzalian, Aryan ;

Akhavan, Nima Dehdashti ;

Yan, Ran ;

Ferain, Isabelle ;

Colinge, Jean-Pierre .

APPLIED PHYSICS LETTERS, 2009, 94 (05)

[13]

Molinos F.-J., 2008, J APPL PHYS, V104

[14] Comparison of Junctionless and Conventional Trigate Transistors With Lg Down to 26 nm [J].

Rios, R. ;

Cappellani, A. ;

Armstrong, M. ;

Budrevich, A. ;

Gomez, H. ;

Pai, R. ;

Rahhal-orabi, N. ;

Kuhn, K. .

IEEE ELECTRON DEVICE LETTERS, 2011, 32 (09) :1170-1172

[15] Mobility enhancement effect in heavily doped junctionless nanowire silicon-on-insulator metal-oxide-semiconductor field-effect transistors [J].

Rudenko, Tamara ;

Nazarov, Alexey ;

Ferain, Isabelle ;

Das, Samaresh ;

Yu, Ran ;

Barraud, Sylvain ;

Razavi, Pedram .

APPLIED PHYSICS LETTERS, 2012, 101 (21)

[16] Low-field mobility in ultrathin silicon nanowire junctionless transistors [J].

Soree, Bart ;

Magnus, Wim ;

Vandenberghe, William .

APPLIED PHYSICS LETTERS, 2011, 99 (23)

[17] ON THE UNIVERSALITY OF INVERSION LAYER MOBILITY IN SI MOSFETS .1. EFFECTS OF SUBSTRATE IMPURITY CONCENTRATION [J].

TAKAGI, S ;

TORIUMI, A ;

IWASE, M ;

TANGO, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (12) :2357-2362

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