Physically Based Evaluation of Electron Mobility in Ultrathin-Body Double-Gate Junctionless Transistors

被引：18

作者：

Wei, Kangliang ^{[1
]}

Zeng, Lang ^{[1
]}

Wang, Juncheng ^{[1
]}

Du, Gang ^{[1
]}

Liu, Xiaoyan ^{[1
]}

机构：

[1] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2014年 / 35卷 / 08期

关键词：

Ionized impurity scattering; junctionless (JL); mobility; screening; surface roughness; ultrathin; CHARGE-TRANSPORT; MOSFETS;

D O I：

10.1109/LED.2014.2331326

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, we presented theoretical results on the low-field electron mobility of ultrathin-body double-gate junctionless transistors. A 1D Poisson-Schrodinger problem perpendicular to the gate is self-consistently solved to get the electron wavefunctions, and the Kubo-Greenwood formula with consideration of phonon, surface roughness, and ionized impurity scattering is employed to evaluate the corresponding mobility components. The dependence of mobility on silicon layer thickness and doping concentration is also investigated.

引用

页码：817 / 819

页数：3

共 17 条

[1] Improvement of carrier ballisticity in junctionless nanowire transistors [J].

Akhavan, Nima Dehdashti ;

Ferain, Isabelle ;

Razavi, Pedram ;

Yu, Ran ;

Colinge, Jean-Pierre .

APPLIED PHYSICS LETTERS, 2011, 98 (10)

[2] Scaling of Trigate Junctionless Nanowire MOSFET With Gate Length Down to 13 nm [J].

Barraud, S. ;

Berthome, M. ;

Coquand, R. ;

Casse, M. ;

Ernst, T. ;

Samson, M. -P. ;

Perreau, P. ;

Bourdelle, K. K. ;

Faynot, O. ;

Poiroux, T. .

IEEE ELECTRON DEVICE LETTERS, 2012, 33 (09) :1225-1227

[3] Evaluation of the Coulomb-limited mobility in high-κ dielectric metal oxide semiconductor field effect transistors [J].

Casterman, D. ;

De Souza, M. M. .

JOURNAL OF APPLIED PHYSICS, 2010, 107 (06)

[4] Reduced electric field in junctionless transistors [J].

Colinge, Jean-Pierre ;

Lee, Chi-Woo ;

Ferain, Isabelle ;

Akhavan, Nima Dehdashti ;

Yan, Ran ;

Razavi, Pedram ;

Yu, Ran ;

Nazarov, Alexei N. ;

Doriac, Rodrigo T. .

APPLIED PHYSICS LETTERS, 2010, 96 (07)

[5] On the modeling of surface roughness limited mobility in SOI MOSFETs and its correlation to the transistor effective field [J].

Esseni, D .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2004, 51 (03) :394-401

[6] Physically based modeling of low field electron mobility in ultrathin single- and double-gate SOI n-MOSFETs [J].

Esseni, D ;

Abramo, A ;

Selmi, L ;

Sangiorgi, E .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2003, 50 (12) :2445-2455

[7] Modeling of electron mobility degradation by remote Coulomb scattering in ultrathin oxide MOSFETs [J].

Esseni, D ;

Abramo, A .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2003, 50 (07) :1665-1674

[8] Theory of the Junctionless Nanowire FET [J].

Gnani, Elena ;

Gnudi, Antonio ;

Reggiani, Susanna ;

Baccarani, Giorgio .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2011, 58 (09) :2903-2910

[9] Mobility and screening effect in heavily doped accumulation-mode metal-oxide-semiconductor field-effect transistors [J].

Goto, Ken-Ichi ;

Yu, Tsung-Hsing ;

Wu, Jeff ;

Diaz, Carlos H. ;

Colinge, J. P. .

APPLIED PHYSICS LETTERS, 2012, 101 (07)

[10] REVIEW OF SOME CHARGE TRANSPORT PROPERTIES OF SILICON [J].

JACOBONI, C ;

CANALI, C ;

OTTAVIANI, G ;

QUARANTA, AA .

SOLID-STATE ELECTRONICS, 1977, 20 (02) :77-89

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