Ohmic contacts to n-type 3C-SiC using Cr/Ni/Au and Ni/Cr/Au metallizations

被引：6

作者：

Leech, Patrick W. ^{[1
]}

Kibel, Martyn H. ^{[2
]}

Barlow, Anders J. ^{[2
]}

Reeves, Geoffrey K. ^{[1
]}

Holland, Anthony S. ^{[1
]}

Tanner, Philip ^{[3
]}

机构：

[1] RMIT Univ, Sch Engn, Melbourne, Vic 3001, Australia

[2] La Trobe Univ, Ctr Mat & Surface Sci, Bundoora, Vic, Australia

[3] Griffith Univ, Queensland Microtechnol Facil, Brisbane, Qld, Australia

来源：

MICROELECTRONIC ENGINEERING | 2019年 / 215卷

关键词：

Silicon carbide; Ohmic contact; Electrical properties; AES; MODIFIED SHEET RESISTANCE; NICKEL;

D O I：

10.1016/j.mee.2019.111016

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The electrical characteristics of Cr/Ni/Au and Ni/Cr/Au contacts to n-type 3C-SiC have been examined using a two-contact circular test structure. In Ni/Cr/Au contacts with Ni as contact layer and Cr as intermediate layer, both the modified sheet resistance, R-sk, and the specific contact resistance, rho(c), have decreased continuously with increase in annealing temperature within the range 750-1000 degrees C. In comparison, the Cr/Ni/Au contacts with Cr as contact layer have exhibited a leveling-off in R-sk and increase in rho(c) after annealing at 900 and 1000 degrees C. These measurements have been correlated with depth profiles of the interfaces using Auger Electron Spectroscopy (AES). The AES profiles have shown a large-scale interdiffusion of the metal layers in the n-type 3C-SiC/Cr/Ni/Au structure after annealing at 750-1000 degrees C. In comparison, the n-type 3C-SiC/Ni/Cr/Au contacts have shown only a limited interdiffusion of the metals (Ni: Au) with the intermediate layer of Cr acting as a diffusion barrier for these metals.

引用

页数：5

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