A Potential Red-Emitting Phosphor BaGd2(MoO4)4:Eu3+ for Near-UV White LED

被引：50

作者：

Guo, Chongfeng ^{[1
,2
]}

Yang, Hyun-Kyoung ^{[1
]}

Fu, Zuoling ^{[1
]}

Li, Ling ^{[1
]}

Choi, Byung-Chun ^{[1
]}

Jeong, Jung-Hyun ^{[1
]}

机构：

[1] Pukyong Natl Univ, Dept Phys, Pusan 608737, South Korea

[2] Huazhong Univ Sci & Technol, Wuhan Natl Lab Optoelect, Wuhan 430074, Hubei Province, Peoples R China

来源：

JOURNAL OF THE AMERICAN CERAMIC SOCIETY | 2009年 / 92卷 / 08期

基金：

中国国家自然科学基金;

关键词：

PHOTOLUMINESCENCE PROPERTIES; LUMINESCENCE; POWDERS;

D O I：

10.1111/j.1551-2916.2009.03076.x

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Red-emitting phosphor BaGd2-xEux(MoO4)(4) has been successfully synthesized by a simple sol-gel method. The process of phosphor formation is characterized by thermogravimetric-differential thermal analysis and X-ray diffraction. Field-emission scanning electronic microscopy is used to characterize the size and the shape of the phosphor particles. Photo-luminescent property of the phosphor is also performed at the room temperature. The effects of firing temperature and Eu3+ activator concentration on the photoluminescence (PL) properties are elaborated in detail. PL characterization reveals that the sample with the firing temperature at 800 degrees C and the concentration of Eu3+ at 0.7 shows the most intense emission, and its intensity is about three times stronger than that of phosphor prepared by solid-state method with the same composition and firing temperature. The new red-emitting phosphor shows an intense absorption at 396 nm, which matches well with commercial near-UV light-emitting diode (LED) chips, therefore, it is a good candidate of red phosphor used for near-UV white LEDs.

引用

页码：1713 / 1718

页数：6

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