Al2O3/ZrO2 Nanolaminates as Ultrahigh Gas-Diffusion Barriers-A Strategy for Reliable Encapsulation of Organic Electronics

被引：278

作者：

Meyer, Jens ^{[1
]}

Goerrn, Patrick ^{[1
]}

Bertram, Franz ^{[1
]}

Hamwi, Sami ^{[1
]}

Winkler, Thomas ^{[1
]}

Johannes, Hans-Hermann ^{[1
]}

Weimann, Thomas ^{[2
]}

Hinze, Peter ^{[2
]}

Riedl, Thomas ^{[1
]}

Kowalsky, Wolfgang ^{[1
]}

机构：

[1] Tech Univ Carolo Wilhelmina Braunschweig, Inst High Frequency Technol, D-38106 Braunschweig, Germany

[2] Phys Tech Bundesanstalt, D-38116 Braunschweig, Germany

来源：

ADVANCED MATERIALS | 2009年 / 21卷 / 18期

关键词：

ATOMIC LAYER DEPOSITION; BINARY REACTION SEQUENCE; OXYGEN DIFFUSION; FILMS; PERMEATION; ALUMINUM; COATINGS; GROWTH; THIN; DEVICES;

D O I：

10.1002/adma.200803440

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Highly efficient gas-diffusion barriers based on nanolaminates of alternating Al2O3 and ZrO2 layers grown at 80 degrees C by atomic-layer deposition are presented. Ultralow water-vapor permeation rates are reported, and a dramatic reduction of statistical defects on larger areas was found compared to single Al2O3 layers. This study provides a concept for the encapsulation of organic optoelectronic devices.

引用

页码：1845 / +

页数：6

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