Thickness Dependence of Ferroelectric Properties for Ferroelectric Random Access Memory Based on Poly(vinylidene fluoride-trifluoroethylene) Ultrathin Films

被引：3
作者：
Du, Xiaoli [1 ]
Zhao, Manping [1 ]
Chen, Guanglong [1 ]
Zhang, Xiuli [1 ]
机构：
[1] Shanghai Univ Engn Sci, Sch Fundamental Studies, Shanghai 201620, Peoples R China
来源：
FERROELECTRICS | 2015年 / 488卷 / 01期
基金：
中国国家自然科学基金; 上海市自然科学基金;
关键词：
P(VDF-TrFE); thickness; switching characteristics; ultrathin film;
D O I：
10.1080/00150193.2015.1073092
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this work, switching characteristics of poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) copolymer films are investigated over wide ranges of thickness. It is found that the thickness dependence of the coercive field is in accordance with the classical crystallization model. The leakage current shows a higher value of 140 nC/cm(2) as the thickness of P(VDF-TrFE) film is reduced to 50nm. In addition, an electroactive interlayer has been employed to improve the ferroelectric properties of P(VDF-TrFE) film. After more than 10(6) cycles of switching, the cell still has good polarization performance at both 25 and 60 degrees C even as the thickness of P(VDF-TrFE) film is down to 50nm.
引用
收藏
页码：148 / 153
页数：6
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