Degradation of ultra-thin oxides with tungsten gates under high voltage: Wear-out and breakdown transient

被引：11

作者：

Palumbo, F ^{[1
]}

Lombardo, S ^{[1
]}

Stathis, JH ^{[1
]}

Narayanan, V ^{[1
]}

McFeely, FR ^{[1
]}

Yurkas, JJ ^{[1
]}

机构：

[1] CNR, IMM, Sez Catania, I-95121 Catania, Italy

来源：

2004 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS | 2004年

关键词：

D O I：

10.1109/RELPHY.2004.1315311

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An analysis of the dynamics of degradation of ultra-thin gate SiO2 films under accelerated high voltage stress, from the growth of defect concentration up to the final phase of the oxide breakdown, was performed on MOS samples with Tungsten as gate material.

引用

页码：122 / 125

页数：4

共 34 条

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