Degradation of ultra-thin oxides with tungsten gates under high voltage: Wear-out and breakdown transient

被引：11

作者：

Palumbo, F ^{[1
]}

Lombardo, S ^{[1
]}

Stathis, JH ^{[1
]}

Narayanan, V ^{[1
]}

McFeely, FR ^{[1
]}

Yurkas, JJ ^{[1
]}

机构：

[1] CNR, IMM, Sez Catania, I-95121 Catania, Italy

来源：

2004 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS | 2004年

关键词：

D O I：

10.1109/RELPHY.2004.1315311

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An analysis of the dynamics of degradation of ultra-thin gate SiO2 films under accelerated high voltage stress, from the growth of defect concentration up to the final phase of the oxide breakdown, was performed on MOS samples with Tungsten as gate material.

引用

页码：122 / 125

页数：4

共 34 条

[1] Wear-out and breakdown of ultra-thin gate oxides after irradiation
Cester, A
ELECTRONICS LETTERS, 2002, 38 (19) : 1137 - 1139
[2] Gate voltage and oxide thickness dependence of progressive wear-out of ultra-thin gate oxides
Pompl, T.
Kerber, A.
Roehner, M.
Kerber, M.
MICROELECTRONICS RELIABILITY, 2006, 46 (9-11) : 1603 - 1607
[3] Body effect induced wear-out acceleration in ultra-thin oxides
Bruyère, S
Roy, D
Robilliart, E
Vincent, E
Ghibaudo, G
MICROELECTRONICS RELIABILITY, 2001, 41 (07) : 1031 - 1034
[4] WEAR-OUT OF ULTRA-THIN GATE OXIDES DURING HIGH-FIELD ELECTRON-TUNNELING
DEPAS, M
VERMEIRE, B
MARTENS, PW
MEURIS, M
HEYNS, MM
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1995, 10 (06) : 753 - 758
[5] Evidence for defect-generation-driven wear-out of breakdown conduction path in ultra thin oxides
Monsieur, F
Vincent, E
Ribes, G
Huard, V
Bruyère, S
Roy, D
Pananakakis, G
Ghibaudo, G
41ST ANNUAL PROCEEDINGS: INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, 2003, : 424 - 431
[6] Evidence for defect-generation-driven wear-out of breakdown conduction path in ultra thin oxides
Monsieur, F
Vincent, E
Ribes, G
Huard, V
Bruyère, S
Roy, D
Pananakakis, G
Ghibaudo, G
2002 IEEE INTERNATIONAL INTEGRATED RELIABILITY WORKSHOP - FINAL REPORT, 2002, : 1 - 8
[7] Resilience of ultra-thin oxynitride films to percolative wear-out and reliability implications for high-κ stacks at low voltage stress
Raghavan, Nagarajan
Padovani, Andrea
Li, Xiang
Wu, Xing
Lo, Vui Lip
Bosman, Michel
Larcher, Luca
Pey, Kin Leong
JOURNAL OF APPLIED PHYSICS, 2013, 114 (09)
[8] Interplay of voltage and temperature acceleration of oxide breakdown for ultra-thin oxides
Wu, E
Suñé, J
Lai, W
Nowak, E
McKenna, J
Vayshenker, A
Harmon, D
MICROELECTRONIC ENGINEERING, 2001, 59 (1-4) : 25 - 31
[9] New Insights into wear-out mechanisms of ultra-thin silicon dioxide gate dielectrics
Anon
Journal of Research of the National Institute of Standards and Technology, 2001, 106 (02)
[10] Voltage-dependent voltage-acceleration of oxide breakdown for ultra-thin oxides
Wu, EY
Aitken, J
Nowak, E
Vayshenker, A
Varekamp, P
Hueckel, G
McKenna, J
Harmon, D
Han, LK
Montrose, C
Dufresne, R
Vollertsen, RP
INTERNATIONAL ELECTRON DEVICES MEETING 2000, TECHNICAL DIGEST, 2000, : 541 - 544

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