Silicon nanocrystals in carbide matrix

被引：32

作者：

Summonte, C. ^{[1
]}

Allegrezza, M. ^{[1
]}

Bellettato, M. ^{[1
]}

Liscio, F. ^{[1
]}

Canino, M. ^{[1
]}

Desalvo, A. ^{[1
]}

Lopez-Vidrier, J. ^{[2
]}

Hernandez, S. ^{[2
]}

Lopez-Conesa, L. ^{[2
]}

Estrade, S. ^{[2
,3
]}

Peiro, F. ^{[2
]}

Garrido, B. ^{[2
]}

Loeper, P. ^{[4
]}

Schnabel, M. ^{[4
]}

Janz, S. ^{[4
]}

Guerra, R. ^{[5
,6
]}

Ossicini, S. ^{[5
,6
]}

机构：

[1] CNR IMM, I-40129 Bologna, Italy

[2] Univ Barcelona, Dept Elect, MIND IN2UB, E-08028 Barcelona, Spain

[3] Univ Barcelona, CCiT UB Ctr Cient Tecnol, TEM MAT, E-08028 Barcelona, Spain

[4] Fraunhofer ISE, D-79110 Freiburg, Germany

[5] Univ Modena & Reggio Emilia, Ctr Interdipartimentale En & Tech, I-42122 Reggio Emilia, Italy

[6] Univ Modena & Reggio Emilia, Dipartimento Sci & Metodi Ingn, I-42122 Reggio Emilia, Italy

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2014年 / 128卷

关键词：

Silicon nanocrystals; Third generation photovoltaics; SiC matrix; INFRARED-SPECTROSCOPY; AMORPHOUS-SILICON; THIN; FILMS; SIZE; NANOSTRUCTURES; LAYERS; SIO2;

D O I：

10.1016/j.solmat.2014.05.003

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Ordered silicon nanocrystals in silicon carbide are produced by Plasma Enhanced Chemical Vapor Deposition by means of the multilayer approach followed by annealing at 1100 degrees C. The crystallization is verified by Raman scattering, X-ray diffraction, Transmission Electron Microscopy, and UV-vis spectroscopy. The conditions for the periodic structure to survive the high temperature annealing and for the SiC barrier to confine the Si crystal growth are examined by energy-filtered transmission electron microscopy and X-ray reflection. The final layout appears to be strongly influenced by the structural features of the as-deposited multilayer. Threshold values of Si-rich carbide sublayer thickness and Si-to-C ratio are identified in order to preserve the ordered structure. The crystallized fraction is observed to be correlated with the total silicon volume fraction. The constraints are examined through the use of ab-initio calculations of matrix-embedded silicon nanocrystals, as well as in terms of existing models for nanocrystal formation, in order to establish the role played by the interface energy on nanocrystal outgrowth, residual amorphous fraction, and continuous crystallization. A parameter space of formation of ordered Si nanocrystals is proposed. The diffusivity of carbon in the crystallized material is evaluated, and estimated to be around 10(-1)6 cm(2)/s at 1100 degrees C. (C) 2014 Elsevier B.V. All rights reserved.

引用

页码：138 / 149

页数：12

共 63 条

[1] Tail absorption in the determination of optical constants of silicon rich carbides [J].