Silicon-Doped Epitaxial Films Grown on GaAs(110) Substrates: the Surface Morphology, Electrical Characteristics, and Photoluminescence Spectra

被引：3

作者：

Galiev, G. B. ^{[1
]}

Klimov, E. A. ^{[1
]}

Pushkarev, S. S. ^{[1
]}

Zaytsev, A. A. ^{[2
]}

Klochkov, A. N. ^{[3
]}

机构：

[1] Russian Acad Sci, Mokerov Inst Ultrahigh Frequency Semicond Elect, Moscow 117105, Russia

[2] Natl Res Univ Elect Technol MIET, Moscow 124498, Russia

[3] Natl Res Nucl Univ MEPhI, Moscow 115409, Russia

来源：

SEMICONDUCTORS | 2020年 / 54卷 / 11期

基金：

俄罗斯基础研究基金会;

关键词：

photoluminescence spectroscopy; molecular-beam epitaxy; GaAs; (110)-oriented substrate; (111)A-oriented substrate; atomic-force microscopy; MOLECULAR-BEAM EPITAXY; GAAS; OVERPRESSURE; (111)A; HETEROSTRUCTURES; (211)A; FIELDS;

D O I：

10.1134/S1063782620110093

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The results of studies of the surface morphology, electrical characteristics, and photoluminescence properties of epitaxial GaAs films grown by molecular-beam epitaxy on GaAs(110) substrates and doped with Si are reported. A series of samples is grown at a temperature of 580 degrees C with the arsenic/gallium flow ratio in the range from 14 to 80. By analyzing the photoluminescence spectra of the samples, the behavior of Si atoms in GaAs is interpreted with consideration for the occupation of Ga or As sites by Si atoms (i.e., for the formation of SiGa and SiAs point defects) and the formation of vacancies of arsenic and gallium V-As and V-Ga. In the analysis, the photoluminescence spectra of the samples on (110)-oriented substrates are compared with the photoluminescence spectra of similar samples on (100)- and (111)A-oriented substrates.

引用

页码：1417 / 1423

页数：7

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