Electrolyte gate dependent high-frequency measurement of graphene field-effect transistor for sensing applications

被引：20

作者：

Fu, W. ^{[1
]}

El Abbassi, M. ^{[1
,2
]}

Hasler, T. ^{[1
]}

Jung, M. ^{[1
]}

Steinacher, M. ^{[1
]}

Calame, M. ^{[1
]}

Schoenenberger, C. ^{[1
]}

Puebla-Hellmann, G. ^{[3
]}

Hellmueller, S. ^{[3
]}

Ihn, T. ^{[3
]}

Wallraff, A. ^{[3
]}

机构：

[1] Univ Basel, Dept Phys, CH-4056 Basel, Switzerland

[2] Ecole Normale Super, Int Ctr Fundamental Phys, F-75231 Paris, France

[3] ETH, Dept Phys, Zurich, Switzerland

来源：

APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 01期

基金：

瑞士国家科学基金会;

关键词：

HIGH-QUALITY;

D O I：

10.1063/1.4857616

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We performed radiofrequency (RF) reflectometry measurements at 2-4 GHz on electrolyte-gated graphene field-effect transistors, utilizing a tunable stub-matching circuit for impedance matching. We demonstrate that the gate voltage dependent RF resistivity of graphene can be deduced, even in the presence of the electrolyte which is in direct contact with the graphene layer. The RF resistivity is found to be consistent with its DC counterpart in the full gate voltage range. Furthermore, in order to access the potential of high-frequency sensing for applications, we demonstrate time-dependent gating in solution with nanosecond time resolution. (C) 2014 AIP Publishing LLC.

引用

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