Control of the Anomalous Hall Effect by Doping in Eu1-xLaxTiO3 Thin Films

被引：78

作者：

Takahashi, K. S. ^{[1
]}

Onoda, M. ^{[2
]}

Kawasaki, M. ^{[1
,3
,4
]}

Nagaosa, N. ^{[1
,5
]}

Tokura, Y. ^{[1
,5
,6
]}

机构：

[1] RIKEN, Adv Sci Inst, Cross Correlated Mat Res Grp, Wako, Saitama 3510198, Japan

[2] Akita Univ, Dept Elect & Elect Engn, Akita 0108502, Japan

[3] Tohoku Univ, WPI Adv Inst Mat Res, Sendai, Miyagi 9808577, Japan

[4] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan

[5] Univ Tokyo, Dept Appl Phys, Tokyo 1138656, Japan

[6] Japan Sci & Technol Agcy, ERATO, Multiferro Project, Tokyo 1138656, Japan

来源：

PHYSICAL REVIEW LETTERS | 2009年 / 103卷 / 05期

关键词：

SEMICONDUCTORS; FERROMAGNETS; SPINTRONICS; MANGANITES; EUTIO3;

D O I：

10.1103/PhysRevLett.103.057204

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The anomalous Hall effect (AHE) has been studied for epitaxial films of Eu1-xLaxTiO3, in which band filling can be controlled by doping x without undesired changes in magnetization. This system has a simple band structure near the conduction band bottom, which makes it possible to design the AHE. As expected, the anomalous Hall resistivity shows a nonmonotonic change as a function of the carrier density accompanied with the sign reversal around n = 2.4 x 10(20) cm(-3). This opens a possibility to control the AHE by devising the material, structure, and doping level.

引用

页数：4

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