Nanowire Formation Using Electron Beam Lithography

被引：0

作者：

Rahman, S. F. Abd. ^{[1
]}

Hashim, U. ^{[1
]}

Nor, M. N. Md. ^{[1
]}

Nuri, A. M. Mohamed ^{[1
]}

Shohini, M. E. A. ^{[1
]}

Salleh, S. ^{[1
]}

机构：

[1] Univ Malaysia Perlis, Inst Nanoelect Engn INEE, Nano Biochip Res Grp, Kawasan Perindustrian Kuala Perlis, Kuala Perlis 02000, Perlis, Malaysia

来源：

NANOSCIENCE AND NANOTECHNOLOGY | 2009年 / 1136卷

关键词：

Electron beam lithography; Nanowire design; ELPHY Quantum;

D O I：

暂无

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Miniaturization and performance improvements are driving the electronics industry to shrink the feature size of semiconductor device. Because of its diffraction limit, conventional photolithography is becoming increasingly insufficient. In this paper, the recent development of the silicon nanowire based on electron beam lithography technique is reviewed. EBL technology is a best tool to fabricate patterns having nanometer feature sizes. In this project, the exposure process was carried out by an in-house modified electron beam writing system using JOEL JSM 6460LA SEM integrated with ELPHY Quantum pattern generator. Following an introduction of this technique, the software description, pattern design formation and resist development are separately examined and discussed.

引用

页码：504 / 508

页数：5