Effect of an additional Cu-deficient layer deposition on alkali treated Cu(In, Ga)Se2 solar cells deposited at low temperature

被引：9

作者：

Sadono, Adiyudha ^{[1
]}

Hino, Masashi ^{[3
]}

Nakada, Kazuyoshi ^{[2
]}

Yamada, Akira ^{[2
]}

机构：

[1] Tokyo Inst Technol, Dept Phys Elect, Meguro Ku, Tokyo 1528552, Japan

[2] Tokyo Inst Technol, Dept Elect & Elect Engn, Meguro Ku, Tokyo 1528552, Japan

[3] Kaneka Corp, Osaka 5660072, Japan

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2018年 / 184卷

关键词：

Cu(In Ga)Se-2; Alkali treatment; Cu-deficient; Chalcopyrite; CU(IN; GA)SE-2; THIN-FILMS; POSTDEPOSITION TREATMENT; EFFICIENCIES;

D O I：

10.1016/j.solmat.2018.04.030

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

In this work, we found that the deposition of a Cu-deficient layer after alkali post-deposition treatment (PDT) of Cu(In,Ga)Se-2 (CIGS) at low temperature (450 degrees C) effectively improves the performance of CIGS solar cells. Compared to the CGIS with only the alkali PDT, the deposition of the Cu-deficient layer leads to the formation of larger holes on the surface and results in higher efficiency. The conversion efficiency improved from 11% to 16% after alkali PDT and Cu-deficient layer deposition because of a passivation effect. The formation of a passivation layer after both alkali treatment and Cu-deficient layer deposition was observed by TEM-EDX, showing that the deposition of the Cu-deficient layer could contribute to a low Cu surface composition. Finally, the effect on the CIGS and CdS interface was analyzed using electron-beam-induced current measurement (EBIC).

引用

页码：67 / 72

页数：6

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