Enhanced scintillation performance of β-Ga2O3 single crystals by Al3+ doping and its physical mechanism

被引：8

作者：

Li, Zhiwei ^{[1
]}

Tang, Huili ^{[1
]}

Li, Yang ^{[2
]}

Gu, Mu ^{[1
]}

Xu, Jun ^{[1
]}

Chen, Liang ^{[2
]}

Liu, Jinliang ^{[2
]}

Ouyang, Xiaoping ^{[2
]}

Liu, Bo ^{[1
]}

机构：

[1] Tongji Univ, Sch Phys Sci & Engn, Shanghai Key Lab Special Artificial Microstruct M, Shanghai 200092, Peoples R China

[2] Northwest Inst Nucl Technol, State Key Lab Intense Pulsed Radiat Simulat & Eff, Xian 710024, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2022年 / 121卷 / 10期

基金：

中国国家自然科学基金;

关键词：

OPTICAL-PROPERTIES; TEMPERATURE;

D O I：

10.1063/5.0097331

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

beta-Ga2O3 is a potential fast semiconductor scintillator with no significant self-absorption and excellent stability. However, the relatively low light yield of beta-Ga2O3 at room temperature limits its practical application. In order to improve its scintillation performance, Al3+ doped beta-Ga2O3 single crystals are investigated. By doping 5%Al3+ (atomic concentration), the light yield of beta-Ga2O3 is increased from 4394 to 6816ph/MeV. The increased light yield may be attributed to the decreased free electron concentration and inhibition of Auger nonradiative recombination. The thermal quenching effect can also be moderated by the increase in the thermal activation energy induced by Al3+ doping. The results indicate that Al3+ doping is an effective method to increase the light yield of beta-Ga2O3.

引用

页数：6

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