Two-dimensional analytical models for the symmetrical triple-material double-gate strained Si MOSFETs

被引：0
作者：
Xin Yan-Hui [1 ,2 ]
Liu Hong-Xia [1 ]
Wang Shu-Long [1 ]
Fan Xiao-Jiao [1 ]
机构：
[1] Xidian Univ, Sch Microelect, Key Lab Wide Band Gap Semicond Mat & Devices Educ, Xian 710071, Peoples R China
[2] North China Univ Water Resources & Elect Power, Dept Informat & Engn, Zhengzhou 450045, Peoples R China
来源：
ACTA PHYSICA SINICA | 2014年 / 63卷 / 14期
基金：
中国国家自然科学基金;
关键词：
strained Si; metal-oxide-semiconductor field-effect transistors; surface potential; threshold voltage; THRESHOLD-VOLTAGE MODEL; SOI-MOSFET;
D O I：
10.7498/aps.63.148502
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
A novel double-gate strained Si metal-oxide-semiconductor field-effect transistor (MOSFET), in which the top and bottom gates consist of three laterally contacting materials with different work functions, is proposed in this paper. The two-dimensional (2D) analytical models for the surface potential, surface electric field and threshold voltage are presented. The effects of Ge fraction on surface potential, surface electric field and threshold voltage are investigated. The effects of the triple-material length ratio on threshold voltage and drain induced barrier lowering are discussed. The characteristics of the device are studied by comparing with those of the single-material double-gate MOSFETs. The results show that the structure can increase the carrier transport speed and suppress the drain induced barrier lowering effect. The three-material gate length ratio is optimized to minimize short-channel effect and drain induced barrier lowering effect.
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页数：6
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