High-Performance Depletion/Enhancement-Mode β-Ga2O3 on Insulator (GOOI) Field-Effect Transistors With Record Drain Currents of 600/450 mA/mm

In this letter, we report on high-performance depletion/enhancement-mode beta-Ga2O3 on insulator (GOOI) field-effect transistors (FETs) with record high drain currents (I-D) of 600/450mA/mm, which are nearly one order of magnitude higher than any other reported I-D values. The threshold voltage (V-T) can be modulated by varying the thickness of the beta-Ga2O3 films and the E-mode GOOI FET can be simply achieved by shrinking the beta-Ga2O3 film thickness. Benefiting from the good interface between beta-Ga2O3 and SiO2 and wide bandgap of beta-Ga2O3, a negligible transfer characteristic hysteresis, high I-D ON/OFF ratio of 10(10), and low subthreshold swing of 140mV/decade for a 300-nm-thick SiO2 are observed. E-mode GOOI FET with source to drain spacing of 0.9- mu m demonstrates a breakdown voltage of 185 V and an average electric field (E) of 2 MV/cm, showing the great promise of GOOI FET for future power devices.