Design considerations for 1.06-μm InGaAsP-InP Geiger-mode avalanche photodiodes

被引：116

作者：

Donnelly, Joseph P. ^{[1
]}

Duerr, Erik K. ^{[1
]}

McIntosh, K. Alex ^{[1
]}

Dauler, Eric A. ^{[1
]}

Oakley, Douglas C. ^{[1
]}

Groves, Steven H. ^{[1
]}

Vineis, Christopher J. ^{[1
]}

Mahoney, Leonard J. ^{[1
]}

Molvar, Karen M. ^{[1
]}

Hopman, Pablo I. ^{[1
]}

Jensen, Katharine Estelle ^{[1
]}

Smith, Gary M. ^{[1
]}

Verghese, Simon ^{[1
]}

Shaver, David C. ^{[1
]}

机构：

[1] MIT, Lincoln Lab, Lexington, MA 02420 USA

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 2006年 / 42卷 / 7-8期

关键词：

avalanche photodiodes; Geiger-mode avalanche photodiodes; photodiodes; semiconductor device modeling; single-photon detection;

D O I：

10.1109/JQE.2006.877300

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

For Geiger-mode avalanche photodiodes, the two most important performance metrics for most applications are dark count rate (DCR) and photon detection efficiency (PDE). In 1.06-mu m separate-absorber-avalanche (multiplier) InP-based devices, the primary sources of dark counts are tunneling through defect levels in the InP avalanche region and thermal generation in the InGaAsP absorber region. PDE is the probability that a photon will be absorbed (quantum efficiency) times the probability that the electron-hole pair generated will actually cause an avalanche. A device model based on experimental data that can simultaneously predict DCR and PDE as a function of overbias and temperature is presented. This model has been found useful in predicting changes in performance as various device parameters, such as avalanche layer thickness, are modified. This has led to designs that are capable simultaneously of low DCR and high PDE.

引用

页码：797 / 809

页数：13

共 37 条

[1]

Albota M. A., 2002, Lincoln Laboratory Journal, V13, P351

[2]

[Anonymous], PHYS SEMICONDUCTOR D

[3] Resonant-cavity-enhanced avalanche photodiodes grown by molecular beam epitaxy on InP for detection near 1.55 μm [J].