Structure of Si(001)-(4x3)-In surface studied by X-ray photoelectron diffraction

被引：14

作者：

Shimomura, M ^{[1
]}

Nakamura, T

Kim, KS

Abukawa, T

Tani, J

Kono, S

机构：

[1] Tohoku Univ, Sci Measurements Res Inst, Sendai, Miyagi 9808577, Japan

[2] Tohoku Univ, Inst Fluid Sci, Sendai, Miyagi 9808577, Japan

来源：

SURFACE REVIEW AND LETTERS | 1999年 / 6卷 / 06期

关键词：

D O I：

10.1142/S0218625X99001219

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

X-ray photoelectron diffraction (XPD) patterns of In 3d core levels have been measured for the Si(001)-(4 x 3)-In surface. An R factor analysis with single-scattering and multiple-scattering simulations of In 3d XPD patterns was performed for three structural models proposed so far. Only the model proposed by surface X-ray diffraction [Appl. Surf. Sci. 123/124, 104 (1998)] appeared to give a reasonably small R factor when the geometric parameters were modified from the original ones.

引用

页码：1097 / 1102

页数：6

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