Electrical isolation of n-type InP using MeV iron implantation at different doses and substrate temperatures

被引：4

作者：

Too, P ^{[1
]}

Ahmed, S ^{[1
]}

Jeynes, C ^{[1
]}

Sealy, BJ ^{[1
]}

Gwilliam, R ^{[1
]}

机构：

[1] Univ Surrey, Sch Elect Comp & Math, Guildford GU2 7XH, Surrey, England

来源：

ELECTRONICS LETTERS | 2002年 / 38卷 / 20期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1049/el:20020803

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An effective inter-device isolation has been obtained by implanting iron into n-type InP The effect of 1 MeV iron (Fe) implantation into n-type InP at 77K, room temperature (RT) and 200degreesC has been investigated with various ion doses in the range of 1 x 10(12) to 1 x 10(15)/cm(2). It is found that RT and 77K implants show better isolation than 200degreesC implants. Rutherford backscattering spectrometry (RBS) is used to gain a better understanding of the isolation mechanisms.

引用

页码：1225 / 1226

页数：2

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