A Millimeter-Wave Ultra-Wide Band Power Amplifier in 0.15-μm GaAs pHEMT for 5G Communication

被引：0
作者：
Huang, Bo-Wei [1 ]
Fu, Zi-Hao
Lin, Kun-You
机构：
[1] Natl Taiwan Univ, Dept Elect Engn, Taipei, Taiwan
来源：
2022 ASIA-PACIFIC MICROWAVE CONFERENCE (APMC) | 2022年
关键词：
power amplifier; GaAs; millimeter-wave; ultra-wideband; 5G;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A millimeter-wave (mmW) ultra-wideband power amplifier (PA) fabricated in 0.15-mu m GaAs pHEMT process is proposed. The equivalent magnetically-coupled resonator (MCR) is adopted to obtain wideband power performance. The input and inter-stage matching network is designed for small-signal gain-flatness to achieve a wideband small-signal response. This PA achieves a saturated output power (P-sat) of 25.1 dBm and a peak power-added efficiency (PAE(max)) of 33.6%. Besides, 3-dB small-signal bandwidth and 1-dB P-sat bandwidth are 75% and 51%, respectively.
引用
收藏
页码：97 / 99
页数：3
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