Competition between memory-keeping and memory-erasing decoherence channels

被引:28
作者
Apollaro, Tony J. G. [1 ,2 ,3 ]
Lorenzo, Salvatore [4 ]
Di Franco, Carlo [3 ]
Plastina, Francesco [1 ,2 ]
Paternostro, Mauro [3 ,5 ]
机构
[1] Univ Calabria, Dipartimento Fis, I-87036 Arcavacata Di Rende, CS, Italy
[2] Ist Nazl Fis Nucl, Grp Collegato Cosenza, Cosenza, Italy
[3] Queens Univ Belfast, Sch Math & Phys, Ctr Theoret Atom Mol & Opt Phys, Belfast BT7 1NN, Antrim, North Ireland
[4] Univ Palermo, Dipartimento Fis & Chim, I-90123 Palermo, Italy
[5] Univ Ulm, Inst Theoret Phys, D-89069 Ulm, Germany
来源
PHYSICAL REVIEW A | 2014年 / 90卷 / 01期
基金
英国工程与自然科学研究理事会;
关键词
SEMICONDUCTOR QUANTUM DOTS; NON-MARKOVIAN DYNAMICS; SPINS; SYSTEMS;
D O I
10.1103/PhysRevA.90.012310
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We study the competing effects of simultaneous Markovian and non-Markovian decoherence mechanisms acting on a single spin. We show the existence of a threshold in the relative strength of such mechanisms above which the spin dynamics becomes fully Markovian, as revealed by the use of several non-Markovianity measures. We identify a measure-dependent nested structure of such thresholds, hinting at a causality relationship among the various non-Markovianity witnesses used in our analysis. Our considerations are then used to argue the unavoidably non-Markovian evolution of a single-electron quantum dot exposed to both intrinsic and Markovian technical noise, the latter of arbitrary strength.
引用
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页数:8
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