Recording characteristics of Ge doped eutectic SbTe phase change discs with various compositions and its potential for high density recording

被引:29
作者
Oomachi, N
Ashida, S
Nakamura, N
Yusu, K
Ichihara, K
机构
[1] Toshiba Co Ltd, Opt Disc Dev Dept, Core Technol Ctr, Digital Media Network Co,Saiwai Ku, Kawasaki, Kanagawa 2128501, Japan
[2] Toshiba Co Ltd, Storage Mat & Devices Lab, Ctr Corp Res & Dev, Saiwai Ku, Kawasaki, Kanagawa 2128582, Japan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2002年 / 41卷 / 3B期
关键词
phase change recording; DVD-RAM; eutectic SbTe alloy; pseudo-binary alloy; linear bit density; track density;
D O I
10.1143/JJAP.41.1695
中图分类号
O59 [应用物理学];
学科分类号
摘要
We describe the recording characteristics of discs having Ge doped eutectic SbTe alloy recording films with various compositions. The recording characteristics are fairly sensitive on the film composition. For our recording condition, the Sb/Te ratio of around 4 and the Ge content of about 5 at.% were preferable to obtain good carrier to noise ratio (CNR). A disc with eutectic recording film of that composition is compared with one with a GeTe-Sb2Te3 pseudo-binary alloy recording film, varying the mark length and the track pitch. The eutectic disc showed better CNR for the shorter mark lengths than the pseudo-binary disc. The cross-erase ratio of the eutectic disc is substantially higher than that of the pseudo-binary disc. The result suggests that the eutectic disc is suitable for higher linear bit density and the pseudo-binary disc is suitable for higher track density.
引用
收藏
页码:1695 / 1697
页数:3
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